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HLB123D - NPN Transistor

General Description

High voltage High speed switching Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The HLB123D is designed for high voltage,high speed switching inductive circuits and amplifier

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isc Silicon NPN Power Transistor DESCRIPTION ·High voltage ·High speed switching ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The HLB123D is designed for high voltage,high speed switching inductive circuits and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCER Collector-Emitter Voltage RBE=150Ω 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 1 A 30 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ HLB123D isc website：www.iscsemi.