| Part number | HLB123D |
|---|---|
| Datasheet | HLB123D-INCHANGE.pdf |
| File Size | 203.63 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC=100mA; IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC=300mA; IB= 30mA VBE(sat)-1 Base-Emitter Saturation Voltage IC=100mA;.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
HLB123D | NPN Transistor | Hi-Sincerity Mocroelectronics |
|
HLB123I | NPN Transistor | Hi-Sincerity Mocroelectronics |
|
HLB123SA | NPN EPITAXIAL PLANAR TRANSISTOR | Hi-Sincerity Mocroelectronics |
