HLB123I - NPN Transistor

This page provides the datasheet information for the HLB123I, a member of the HLB123I_Hi NPN Transistor family.

Product Overview

Hi-Sincerity Mocroelectronics

Part number	HLB123I
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	52.81 KB
Description	NPN Transistor
Datasheet	HLB123I Datasheet
Additional preview pages of the HLB123I datasheet.

The HLB123I is designed for high voltage.

High speed switching inductive circuits and amplifier applications.

High Speed Switching.
Low Saturation Voltage.
High Reliability TO-251 Absolute Maximum Ratings (TA=25°C).
Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
Maximum Power Dissipation Total Power Dissipation (TC=25°C) 20 W.
Maximum Voltages and Currents BVCBO Collector to Base.

HLB123D - NPN Transistor (INCHANGE)
HLB121 - NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR (UTC)
HLB121A - NPN Triple Diffused Planar Type High Voltage Transistor (HI-SINCERITY)
HLB122 - NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR (UTC)
HLB124 - NPN EPITAXIAL PLANAR TRANSISTOR (UTC)
HLB124E - NPN Transistor (INCHANGE)
HLB125HE - NPN Epitaxial Planar Transistor (Hi-Sincerity Microelectronics)

Other Datasheets by Hi-Sincerity Mocroelectronics

Published: Mar 23, 2005 |