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HLB123D - NPN Transistor

Download the HLB123D datasheet PDF. This datasheet also covers the HLB123D_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HLB123D is designed for high voltage.

High speed switching inductive circuits and amplifier applications.

Key Features

  • High Speed Switching.
  • Low Saturation Voltage.
  • High Reliability TO-126ML Absolute Maximum Ratings (TA=25°C).
  • Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TC=25°C) 30 W.
  • Maximum Voltages and Currents BVCBO Collector to Base V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HLB123D_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HLB123D
Manufacturer Hi-Sincerity Mocroelectronics
File Size 47.05 KB
Description NPN Transistor
Datasheet download datasheet HLB123D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6603 Issued Date : 1993.03.15 Revised Date : 2006.02.20 Page No. : 1/5 HLB123D NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123D is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO-126ML Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -50 ~ +150 °C Junction Temperature ...................................................................................................................