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HLB121 - NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR

General Description

The UTC HLB121 is a medium power transistor designed for use in switching applications.

Key Features

  • High breakdown voltage.
  • Low collector saturation voltage.
  • Fast switching speed 1 TO-251 1: BASE 2:.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES * High breakdown voltage * Low collector saturation voltage * Fast switching speed 1 TO-251 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number:HLB121L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Base Current (Pulse) Total Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature SYMBOL VCBO www.DataSheet4U.