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HLB124 - NPN EPITAXIAL PLANAR TRANSISTOR

General Description

The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications.

Key Features

  • High Speed Switching.
  • Low Saturation Voltage.
  • High Reliability TO-220 1: BASE 2:.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UTC HLB124 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications. 1 FEATURES * High Speed Switching * Low Saturation Voltage * High Reliability TO-220 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: HLB124L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (PULSE) Base Current (DC) Base Current (PULSE) Total Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO www.DataSheet4U.