HLB124E - NPN Transistor

Inchange Semiconductor

General Description

High Speed Switching Low Collector Saturation Voltage High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

circuits, and amplifier applications.

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Datasheet Details

Part number	HLB124E
Manufacturer	Inchange Semiconductor
File Size	196.71 KB
Description	NPN Transistor
Datasheet	HLB124E Datasheet

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isc Silicon NPN Power Transistor HLB124E DESCRIPTION ·High Speed Switching ·Low Collector Saturation Voltage ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed switching inductive circuits, and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 2 A ICP Collector Current-Pulse 4 A IB Base Current 1 A IBP Base Current-Pulse PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 2 A 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.