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HLB124E Datasheet

Manufacturer: Inchange Semiconductor
HLB124E datasheet preview

Datasheet Details

Part number HLB124E
Datasheet HLB124E-INCHANGE.pdf
File Size 196.71 KB
Manufacturer Inchange Semiconductor
Description NPN Transistor
HLB124E page 2 HLB124E page 3

HLB124E Overview

·High Speed Switching ·Low Collector Saturation Voltage ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed switching inductive circuits, and amplifier applications. IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA;.

HLB124E from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Hi-Sincerity Mocroelectronics Logo HLB124E NPN Transistor Hi-Sincerity Mocroelectronics
UTC Logo HLB124 NPN EPITAXIAL PLANAR TRANSISTOR UTC
Inchange Semiconductor logo - Manufacturer

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