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HLB124E - NPN Transistor

Download the HLB124E datasheet PDF. This datasheet also covers the HLB124E_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HLB124E is designed for high voltage, high speed switching inductive circuits, and amplifier applications.

Key Features

  • High Speed Switching.
  • Low Saturation Voltage.
  • High Reliability TO-220 Absolute Maximum Ratings (TA=25°C).
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C.
  • Maximum Power Dissipation Total Power Dissipation (TC=25°C) 35 W.
  • Maximum Voltages and Currents (TA=25°C) BVCBO.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HLB124E_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HLB124E
Manufacturer Hi-Sincerity Mocroelectronics
File Size 46.37 KB
Description NPN Transistor
Datasheet download datasheet HLB124E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6727 Issued Date : 1998.07.01 Revised Date : 2004.11.03 Page No. : 1/5 HLB124E NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB124E is designed for high voltage, high speed switching inductive circuits, and amplifier applications. Features • High Speed Switching • Low Saturation Voltage • High Reliability TO-220 Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ....................................................................................................................................