HMBTA13 - NPN Transistor

Hi-Sincerity Mocroelectronics

Download the HMBTA13 datasheet PDF. This datasheet also covers the HMBTA13_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Darlington Amplifier Transistor Absolute Maximum Ratings SOT-23 Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 350 mW Thermal Resistance Junction To Ambient Rθja

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HMBTA13 npn transistor by Hi-Sincerity Mocroelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HMBTA13_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HMBTA13
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	36.73 KB
Description	NPN Transistor
Datasheet	HMBTA13 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HI-SINCERITY MICROELECTRONICS CORP. HMBTA13 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6842 Issued Date : 1994.07.29 Revised Date : 2004.09.08 Page No. : 1/4 Description Darlington Amplifier Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 350 mW • Thermal Resistance Junction To Ambient Rθja.