HMJE2955T - PNP EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics

Download the HMJE2955T datasheet PDF. This datasheet also covers the HMJE2955T_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMJE2955T is designed for general purpose of amplifier and switching applications.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TC

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HMJE2955T pnp epitaxial planar transistor by Hi-Sincerity Mocroelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (HMJE2955T_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	HMJE2955T
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	47.86 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HMJE2955T Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HI-SINCERITY MICROELECTRONICS CORP. HMJE2955T PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6736 Issued Date : 1992.12.15 Revised Date : 2004.11.19 Page No. : 1/5 Description The HMJE2955T is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220 • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) ............................................................................................