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HMJE3055T - NPN EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HMJE3055T, a member of the HMJE3055T_Hi NPN EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HMJE3055T is designed for general purpose of amplifier and switching applications.

Maximum Temperature Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TC=

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Datasheet Details

Part number HMJE3055T
Manufacturer Hi-Sincerity Mocroelectronics
File Size 41.73 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HMJE3055T Datasheet
Additional preview pages of the HMJE3055T datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6737 Issued Date : 1993.09.24 Revised Date : 2004.11.19 Page No. : 1/4 Description The HMJE3055T is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220 • Maximum Temperature Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .............................................................................................
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