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HMJE3055T - NPN EPITAXIAL PLANAR TRANSISTOR

Download the HMJE3055T datasheet PDF (HMJE3055T_Hi included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for npn epitaxial planar transistor.

Description

The HMJE3055T is designed for general purpose of amplifier and switching applications.

Maximum Temperature Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TC=

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Note: The manufacturer provides a single datasheet file (HMJE3055T_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMJE3055T
Manufacturer Hi-Sincerity Mocroelectronics
File Size 41.73 KB
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HMJE3055T Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HMJE3055T NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6737 Issued Date : 1993.09.24 Revised Date : 2004.11.19 Page No. : 1/4 Description The HMJE3055T is designed for general purpose of amplifier and switching applications. Absolute Maximum Ratings (TA=25°C) TO-220 • Maximum Temperature Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .............................................................................................
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