HTIP105 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HTIP105, a member of the HTIP105_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Description

The HTIP105 is designed for monolithic construction with built in base-emitter shunt resistors industrial.

Maximum Temperatures B Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum R1 R2 E

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	HTIP105
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	41.98 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HTIP105 Datasheet
Additional preview pages of the HTIP105 datasheet.

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HI-SINCERITY MICROELECTRONICS CORP. HTIP105 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6743 Issued Date : 1998.07.01 Revised Date : 2004.11.19 Page No. : 1/4 Description The HTIP105 is designed for monolithic construction with built in base-emitter shunt resistors industrial. TO-220 Darlington Schematic C Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures B Storage Temperature ................................................................... -55 ~ +150 °C Junction Temperature .......................................................... +150 °C Maximum R1 R2 E • Maximum Power Dissipation Total Power Dissipation (TC=25°C) ....................................................................................................................

Published: Mar 26, 2005 |