HTIP127 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HTIP127, a member of the HTIP127_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Description

The HTIP127 is designed for use in general purpose amplifier and low-speed switching applications.

Maximum Temperatures B Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum R1 R2 E Maximu

Hi-Sincerity Mocroelectronics

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Datasheet Details

Part number	HTIP127
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	50.37 KB
Description	PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet	HTIP127 Datasheet
Additional preview pages of the HTIP127 datasheet.

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HI-SINCERITY MICROELECTRONICS CORP. HTIP127 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6713 Issued Date : 1993.01.13 Revised Date : 2004.11.19 Page No. : 1/5 Description The HTIP127 is designed for use in general purpose amplifier and low-speed switching applications. TO-220 Darlington Schematic C Absolute Maximum Ratings (TA=25°C) • Maximum Temperatures B Storage Temperature ................................................................... -55 ~ +150 °C Junction Temperature .......................................................... +150 °C Maximum R1 R2 E • Maximum Power Dissipation Total Power Dissipation (TC=25°C) .................................................................................................................... 65 W Total Power Dissipation (TA=25°C) .....

Published: Mar 26, 2005 |