SCX60R190C Datasheet | HiSemicon

DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency. Features - VDS(V)=600V, ID=20A - RDS(ON) TYP:156mΩ@VGS=10V , ID=10A MAX:190mΩ Applications - Power faction correction (PFC) - Switched mode power supplies (SMPS) - Uninterruptible power supply (UPS) - LED lighting power TO-220F-3L TO-220-3L TO-263-2L ORDERING INFORMATION Part No. SCF60R190C SCP60R190C SCA60R190C Package TO-220F-3L TO-220-3L TO-263-2L Http://.hi-semicon. Marking SCF60R190C SCP60R190C SCA60R190C Material Pb Free Pb Free Pb Free Packing Tube Tube Reel Rev 1.1 Page 1 of 10 ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Ratings Characteristics Symbol SCF60R190C SCP60R190C SCA60R190C Drain-Source Voltage Gate-Source Voltage ±30 TC = 25C Drain Current TC = 100C Drain Current Pulsed(Note...