SCX65R380C Overview
Description
The Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency.
Key Features
- VDS=650V, ID=11A
- V =700V DS,min@Tj(max)
- Power faction correction (PFC)
- Switched mode power supplies (SMPS)
- Uninterruptible power supply (UPS)
