SCX65R380C Datasheet | HiSemicon

DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency. Features - VDS=650V, ID=11A - V =700V DS,min@Tj(max) - RDS(ON) TYP:320mΩ@VGS=10V , ID=5.5A MAX:380mΩ Applications - Power faction correction (PFC) - Switched mode power supplies (SMPS) - Uninterruptible power supply (UPS) - LED lighting power TO-220F-3L TO-220-3L TO-252-2L ORDERING INFORMATION Part No. SCF65R380C SCP65R380C SCD65R380C Package TO-220F-3L TO-220-3L TO-252-2L Http://.hi-semicon. Marking SCF65R380C SCP65R380C SCD65R380C Material Pb Free Pb Free Pb Free Packing Tube Tube Reel Rev 1.1 Page 1 of 10 ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Ratings Characteristics Symbol SCF65R380C SCP65R380C SCD65R380C Drain-Source Voltage Gate-Source Voltage ±30 TC = 25C Drain Current TC =...