SCX70R360C6 Datasheet | HiSemicon

DESCRIPTION The Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency. Features - VDS,min@Tj(max)=750V - ID=12A - RDS(ON) TYP:0.31Ω@VGS=10V ID=6A MAX:0.36Ω Applications - Power faction correction (PFC) - Switched mode power supplies (SMPS) - Uninterruptible power supply (UPS) - LED lighting power ORDERING INFORMATION Part No. SCF70R360C6 SCP70R360C6 SCD70R360C6 Package TO-220F-3L TO-220-3L TO-252-2L Marking SCF70R360C6 SCP70R360C6 SCD70R360C6 Http://.hi-semicon. Material Pb Free Pb Free Pb Free Packing Tube Tube Reel Rev 1.0 Page 1 of 11 ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Characteristics Symbol Ratings SCF70R360C6 SCD/P70R360C6 Drain-Source Voltage Gate-Source Voltage ±20 TC = 25C Drain Current TC = 100C Drain Current Pulsed(Note 1) Power Dissipation(TC=25C)...