SCX70R360C6 Overview
Description
The Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency.
Key Features
- VDS,min@Tj(max)=750V
- RDS(ON) TYP:0.31Ω@VGS=10V ID=6A MAX:0.36Ω Applications
- Power faction correction (PFC)
- Switched mode power supplies (SMPS)
- Uninterruptible power supply (UPS)
