SFN3009T Overview
The SFN3009T uses advanced Trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety applications.
SFN3009T Key Features
- VDS=30V,ID=90A -RDS(on) TYP:3.5mΩ@VGS=10V ID=30A
| Part number | SFN3009T |
|---|---|
| Datasheet | SFN3009T-HiSemicon.pdf |
| File Size | 707.74 KB |
| Manufacturer | HiSemicon |
| Description | 30V 90A N-CHANNEL POWER MOSFET |
|
|
|
The SFN3009T uses advanced Trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety applications.
| Part Number | Description |
|---|---|
| SFN3002PT | -30V -20A P-CHANNEL POWER MOSFET |
| SFN3002PT5 | -30V -25A P-CHANNEL POWER MOSFET |
| SFN3003PT | -30V -30A P-CHANNEL POWER MOSFET |
| SFN3003T | 30V 30A N-CHANNEL POWER MOSFET |
| SFN3006PT | -30V -60A P-CHANNEL POWER MOSFET |
| SFN0213T2 | 20V 13A DUAL N-CHANNEL POWER MOSFET |
| SFN0330T2 | 30V 30A DUAL N-CHANNEL POWER MOSFET |