SFX4N65 Datasheet | HiSemicon

DESCRIPTION This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced using Hi-semicon proprietary F-Cell TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. Features - VDS(V)=650V, ID=4A - RDS(ON) TYP:2.3Ω@VGS=10V ID=2A MAX:2.7Ω Applications - Power faction correction (PFC) - Switched mode power supplies (SMPS) - Uninterruptible power supply (UPS) - LED lighting power ORDERING INFORMATION Part No. SFP4N65 SFF4N65 SFU4N65 SFM4N65 SFD4N65 Package TO-220-3L TO-220F-3L TO-251J-3L TO-251D-3L TO-252-2L Marking SFP4N65 SFF4N65 SFU4N65 SFM4N65 SFD4N65 Material Pb Free Pb Free Pb Free Pb Free Pb Free Packing Tube Tube Tube Tube Reel Http://.hi-semicon. Rev 1.0 Page 1 of 13 ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Characteristics Symbol Ratings SFP4N65 SFF4N65 SFM/D4N65 Drain-Source Voltage Gate-Source Voltage ±30 TC = 25C Drain Current TC = 100C Drain Current Pulsed(Note 1) Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy (Note...