SFX4N65 Description
This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced using Hi-semicon proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These...
SFX4N65 Key Features
- VDS(V)=650V, ID=4A -RDS(ON) TYP:2.3Ω@VGS=10V ID=2A MAX:2.7Ω