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SFX4N65 - 4A 650V N-CHANNEL MOSFET

Description

This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced using Hi-semicon proprietary F-CellTM structure VDMOS technology.

Features

  • VDS(V)=650V, ID=4A.
  • RDS(ON) TYP:2.3Ω@VGS=10V ID=2A MAX:2.7Ω.

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Datasheet preview – SFX4N65

Datasheet Details

Part number SFX4N65
Manufacturer HiSemicon
File Size 1.37 MB
Description 4A 650V N-CHANNEL MOSFET
Datasheet download datasheet SFX4N65 Datasheet
Additional preview pages of the SFX4N65 datasheet.

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Full PDF Text Transcription

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4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION This power mosfet is an N-channel enhancement mode power MOS field effect transistor which is produced using Hi-semicon proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. Features ◆VDS(V)=650V, ID=4A ◆RDS(ON) TYP:2.3Ω@VGS=10V ID=2A MAX:2.
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