SFX7N65E - 7A 650V N-CHANNEL MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology.

Features

VDS(V)=650V, ID=7A.
RDS(ON) TYP:1.1Ω@VGS=10V ID=3.5A MAX:1.4Ω.

HiSemicon

📥 Download Datasheet

Datasheet Details

Part number	SFX7N65E
Manufacturer	HiSemicon
File Size	1.17 MB
Description	7A 650V N-CHANNEL MOSFET
Datasheet	SFX7N65E Datasheet
Additional preview pages of the SFX7N65E datasheet.

📁 Similar Datasheet

SFX7N50 - 500V N-CHANNEL POWER MOSFET (HI-SEMICON)
SFX1192 - PNP TRANSISTOR (SSDI)
SFX18N50 - 500V N-CHANNEL MOSFET (HI-SEMICON)
SFX20N60 - 600V N-CHANNEL POWER MOSFET (HI-SEMICON)
SFX33N10 - 100V N-CHANNEL MOSFET (HI-SEMICON)
SFX3N50 - 500V N-CHANNEL POWER MOSFET (HI-SEMICON)
SFX3N50TS - 500V N-CHANNEL POWER MOSFET (HI-SEMICON)
SFX5096-5 - High Voltage PNP Transistor (SSDI)
SFX5N50 - 500V N-CHANNEL POWER MOSFET (HI-SEMICON)
SFX5N50TS - 500V N-CHANNEL POWER MOSFET (HI-SEMICON)

Other Datasheets by HiSemicon

SFX3009PT - 30V 90A P-CHANNEL POWER MOSFET
SFX4003T - 40V 30A N-CHANNEL POWER MOSFET
SFX4N65 - 4A 650V N-CHANNEL MOSFET
SFX6005T - 60V 50A N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text

7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features ◆VDS(V)=650V, ID=7A ◆RDS(ON) TYP:1.1Ω@VGS=10V ID=3.5A MAX:1.

Published: Aug 26, 2025 |