SFX7N65E Datasheet | HiSemicon

DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features - VDS(V)=650V, ID=7A - RDS(ON) TYP:1.1Ω@VGS=10V ID=3.5A MAX:1.4Ω Applications - Power faction correction (PFC) - Switched mode power supplies (SMPS) - Uninterruptible power supply (UPS) - LED lighting power 1 3 1 3 1 2 3 1:Gate 2:Darin 3:Source ORDERING INFORMATION Part No. SFF7N65E SFP7N65E SFD7N65E Package TO-220F-3L TO-220-3L TO-252-2L Marking SFF7N65E SFP7N65E SFD7N65E Http://.hi-semicon. Material Pb Free Pb Free Pb Free Packing Tube Tube Reel Rev 1.1 Page 1 of 12 ABSOLUTE MAXIMUM RATINGS (TJ=25C unless otherwise noted) Characteristics Symbol SFF7N65E Ratings SFP7N65E Drain-Source Voltage Gate-Source Voltage ±30 TC = 25C Drain Current TC =...