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1SS198 - Silicon Schottky Barrier Diode

Key Features

  • Detection efficiency is very good.
  • Small temperature coefficient.
  • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS198 Cathode Green Mark 2 Package Code MHD Outline 2 1 Cathode band 2 1. Cathode 2. Anode 1SS198 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 30 125.
  • 55 to +125 Unit V mA °C °C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1SS198 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-298A (Z) Rev. 1 Oct. 1998 Features • Detection efficiency is very good. • Small temperature coefficient. • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS198 Cathode Green Mark 2 Package Code MHD Outline 2 1 Cathode band 2 1. Cathode 2. Anode 1SS198 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 10 30 125 –55 to +125 Unit V mA °C °C Electrical Characteristics (Ta = 25°C) Item Forward current Reverse current Capacitance Rectifier efficiency ESD-Capability Notes: 1. *1 Symbol IF IR C η — Min 4.5 — — 70 100 Typ — — — — — Max — 70 1.