1SS286
1SS286 is Silicon Schottky Barrier Diode manufactured by Hitachi Semiconductor.
Features
- Very low reverse current.
- Detection efficiency is very good.
- Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. 1SS286 Cathode band Green Mark 7 Package Code MHD
Outline
1 Cathode band
1. Cathode 2. Anode
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 25 35 150 100
- 55 to +100 Unit V m A m W °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse voltage Reverse current Capacitance Capacitance deviation Forward voltage deviation ESD-Capability Symbol VF VR IR C ∆C ∆VF
- Min
- 25
- -
- - 10 Typ
- -
- -
- -
- Max 0.6
- 10 1.2 0.1 10
- Unit V V n A p F p F m V V Test Condition IF = 10m A IR = 10µA VR= 10V VR = 0V, f = 1MHz VR = 0V, f = 1MHz IF = 10m A
- C = 200p F, Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion; IR ≥ 20µA 2. Each group shall unify a multiple of 4 diodes
Rev.1, Sep. 1995, page 2 of 6
- 1
10- 2 10
- 3
Forward current I F (A)
- 4 10 10
- 5
-...
