Datasheet4U Logo Datasheet4U.com

1SS286 - Silicon Schottky Barrier Diode

Key Features

  • Very low reverse current.
  • Detection efficiency is very good.
  • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS286 Cathode band Green Mark 7 Package Code MHD Outline 7 1 Cathode band 2 1. Cathode 2. Anode 1SS286 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 25 35 150 100.
  • 55 to +100 U.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
1SS200 Diode Toshiba Semiconductor
1SS201 Diode Toshiba Semiconductor
1SS201 SUPER HIGH SPEED SWITCHING DIODE XIN SEMICONDUCTOR
1SS220 (1SS220 / 1SS221) SILICON SWITCHING DIODES NEC
1SS226 Switching Diodes Toshiba Semiconductor

Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
1SS270 Silicon Diode
1SS108 Silicon Schottky Barrier Diode
1SS110 Silicon Diode
1SS118 Silicon Epitaxial Planar Diode
1SS119 Silicon Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-302A (Z) Rev. 1 Sep. 1995 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS286 Cathode band Green Mark 7 Package Code MHD Outline 7 1 Cathode band 2 1. Cathode 2.