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1SS286 Datasheet Silicon Schottky Barrier Diode

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-302A (Z) Rev. 1 Sep.

Key Features

  • Very low reverse current.
  • Detection efficiency is very good.
  • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS286 Cathode band Green Mark 7 Package Code MHD Outline 7 1 Cathode band 2 1. Cathode 2. Anode 1SS286 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg Value 25 35 150 100.
  • 55 to +100 U.

1SS286 Distributor

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