2SA1171 Datasheet | Hitachi Semiconductor

Silicon PNP Epitaxial Application Low frequency small signal amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings - 90 - 90 - 5 - 50 150 150 - 55 to +150 Unit V V V m A m W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min - 90 - 1 Typ - - - - - 200 1.6 Max - - 0.5 800 - 0.75 - 0.5 - - Unit V µA Test conditions I C = - 1 m A, RBE = ∞ VCB = - 75 V, IE = 0 VCE = - 12 V, IC = - 2 m A Collector to emitter breakdown V(BR)CEO voltage Collector cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Grade Mark h FE D PD 250 to 500 E PE 400 to 800 I CBO h FE- VBE VCE(sat) f T Cob - - - - V V MHz p F VCE = - 12 V, IC...