2SA1191 Datasheet | Hitachi Semiconductor

2SA1190, 2SA1191 Silicon PNP Epitaxial Application - Low frequency low noise amplifier - plementary pair with 2SC2855 and 2SC2856 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1190, 2SA1191 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SA1190 - 90 - 90 - 5 - 100 100 400 150 - 55 to +150 2SA1191 - 120 - 120 - 5 - 100 100 400 150 - 55 to +150 Unit V V V m A m A m W °C °C 2SA1190, 2SA1191 Electrical Characteristics (Ta = 25°C) 2SA1190 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current trnsfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO h FE- 2SA1191 Max - - - - 0.1 - 0.1 800 Min Typ Max - - - - 0.1 - 0.1 800 Unit V V V µA µA Test conditions I C = - 10 µA, IE = 0 I C = - 1 m A, RBE = ∞ I E = - 10 µA, IC = 0 VCB = - 70 V, IE = 0 VEB = - 2 V, IC = 0 VCE = - 12 V, I C = - 2 m A- 2 I C...