Download 2SA1195 Datasheet PDF
Inchange Semiconductor
2SA1195
2SA1195 is POWER TRANSISTOR manufactured by Inchange Semiconductor.
DESCRIPTION - Low Collector Saturation Voltage - High voltage - plement to Type 2SC2483 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ Junction Temperature Tstg Storage Temperature Range VALUE -160 -160 -6 -1.5 2 UNIT V V V A w ℃ -55~150 ℃ isc website:.iscsemi. isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...