Datasheet Details
| Part number | 2SA1195 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 161.34 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA1195 Download (PDF) |
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| Part number | 2SA1195 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 161.34 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA1195 Download (PDF) |
|
|
|
·Low Collector Saturation Voltage ·High voltage ·Complement to Type 2SC2483 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE -160 -160 -6 -1.5 2 UNIT V V V A w 10 W 175 ℃ -55~150 ℃ isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA;
IB= -50mA VBE(on) Collector-Emitter Saturation Voltage IC= -50mA;VCE=-5V ICBO Collector Cutoff Current VCB= -160V;
IE= 0 IEBO Emitter Cutoff Current VEB= -6V;
isc Silicon PNP Power Transistor 2SA1195.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SA1195 | Silicon PNP Transistor | Toshiba |
 |
2SA1195 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
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| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |
| 2SA1109 | POWER TRANSISTOR |
| 2SA1110 | POWER TRANSISTOR |
| 2SA1111 | POWER TRANSISTOR |