2SA1195 Datasheet and Specifications PDF

·Low Collector Saturation Voltage ·High voltage ·Complement to Type 2SC2483 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio freque.

ff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE-1 DC Current Gain IC= -0.5A ; VCE= -5V hFE-2 DC Current Gain IC= -0.1A ; VCE= -5V fT Current-Gain
*Bandwidth Product IC= -200mA; VCE= -5V
* hFE-2 Classifications R O 60-120 100-200 2SA1195 MIN TYP. MAX UNI.

: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. FEATURES . Large Collector Current and Collector Power Dissipation .

. Large Collector Current and Collector Power Dissipation Capability. (Pc=2.0W at Ta=25°C) . Designed for Complementary Use with 2SC2483. Unit in mm 9.9UAX. 0a2±O.2 , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current .

·With TO-202 package ·High power dissipation ·Complement to type 2SC2483 APPLICATIONS ·For high voltage and general purpose amplification PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simp.

Collector-emitter breakdown voltage IC=-10mA; IB=0 IC=-500mA ;IB=-50m A IC=-5mA ; VCE=-5V IC=-200mA ; VCE=-5V IC=-500mA ; VCE=-5V VCB=-150V; IE=0 VEB=-6V; IC=0 IE=0; VCB=-10V;f=1MHz IE=-100mA ; VCB=-5V 160 V Collector-emitter saturation voltage -1.0 V Base-emitter on voltage -0.7 V DC cur.