2SA1195 Overview
Key Specifications
Max Operating Temp: 175 °C
Description
With TO-202 package - High power dissipation - Complement to type 2SC2483 APPLICATIONS - For high voltage and general purpose amplification PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 15 175 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -160 -160 -6 -1.5 -0.5 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SA1195 SYMBOL TYP. MAX UNIT V(BR)CEO VCEsat VBE hFE-1 hFE-2 ICBO IEBO COB fT Collector-emitter breakdown voltage IC=-10mA; IB=0 IC=-500mA ;IB=-50m A IC=-5mA ; VCE=-5V IC=-200mA ; VCE=-5V IC=-500mA ; VCE=-5V VCB=-150V; IE=0 VEB=-6V; IC=0 IE=0; VCB=-10V;f=1MHz IE=-100mA ; VCB=-5V 160 V Collector-emitter saturation voltage -1.0 V Base-emitter on voltage -0.7 V DC current gain 60 200 DC current gain 40 Collector cut-off current -1 µA Emitter cut-off current -1 µA Output capacitance 35 pF Transition frequency 15 50 MHz hFE classifications R 60-120 O 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1195 Fig.2 outline dimensions 3.
