2SA1195
2SA1195 is Silicon PNP Transistor manufactured by Toshiba.
FEATURES
. Large Collector Current and Collector Power
Dissipation Capability. (Pc=2.0W at Ta=25°C) . Designed for plementary Use with 2SC2483.
Unit in mm 9.9UAX. 0a2±O.2
,
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Base Current
Collector Power Dissipation
Ta=25 C Tc=25 C
Junction Temperature
Storage Temperature Range
SYMBOL VCBO VCEO VEBO ic IB PC PC
Tstg
RATING -160 -160
-1.5 -1.0
2.0 15
175 -55 -150
UNIT
1. BASE 2. COLLECTOR (FIN) a EMITTER
TOSHIBA
2-10F1B
Weight : 1.37g
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current
DC Current Gain i CBO l EBO h FE(l) (Note)
V CB=-150V, I E=0 V EB =-6V, I C=0
VCE=-5V, Ic=-200m A
Collector-Emitter Saturation Voltage h FE(2) VC...
