2SA1195 - Silicon PNP Transistor

Toshiba

Key Features

. Large Collector Current and Collector Power Dissipation Capability. (Pc=2.0W at Ta=25°C) . Designed for Complementary Use with 2SC2483. Unit in mm 9.9UAX. 0a2±O.2 ,.

2SA1195 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SA1195
Manufacturer	Toshiba
File Size	38.40 KB
Description	Silicon PNP Transistor
Datasheet	2SA1195 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
2SA1120	Silicon PNP Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. FEATURES . Large Collector Current and Collector Power Dissipation Capability. (Pc=2.0W at Ta=25°C) . Designed for Complementary Use with 2SC2483. Unit in mm 9.9UAX. 0a2±O.2 , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25 C Tc=25 C Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC PC Tstg RATING -160 -160 -1.5 -1.0 2.0 15 175 -55 -150 UNIT 1. BASE 2. COLLECTOR (FIN) a EMITTER TOSHIBA 2-10F1B Weight : 1.