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2SB1012(K)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary pair with 2SD1376(K)
Outline
TO-126 MOD
2
3 1. Emitter 2. Collector 3. Base ID 5 kΩ (Typ) 1 kΩ (Typ) 1
1
2
3
2SB1012(K)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID*
1 1
Rating –120 –120 –7 –1.5 –3.0 20 150 –55 to +150 1.5
Unit V V V A A W °C °C A
Electrical Characteristics (Ta = 25°C)
Item Symbol Min –120 –7 — — 2000 — — — — — — — Typ — — — — — — — — — — 0.5 2.0 Max — — –100 –10 30000 –1.5 –2.0 –2.
2SB1012 Datasheet
