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2SC1342 - Silicon NPN epitaxial planar type Transistor

Key Features

  • m. hk/eng/bo/grp3/index. htm Japan : http://www. hitachi. co. jp/Sicd/indx. htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: (408) 433-1990 Fax: (408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Stra.
  • e 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fa.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC1342 Silicon NPN Epitaxial Planar Application • VHF amplifier, mixer • Local oscollator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1342 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 20 4 30 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 20 4 — 1 Typ — — — — — 0.8 1.1 20 320 5.5 0.9 17 Max — — — 0.5 200 1.2 1.5 35 — 8.5 1.