2SC3652 datasheet by Hitachi Semiconductor (now Renesas).
| Part number | 2SC3652 |
|---|---|
| Datasheet | 2SC3652_HitachiSemiconductor.pdf |
| File Size | 29.27 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | SILICON NPN EPITAXIAL TRANSISTOR |
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2SC3652 Silicon NPN Epitaxial Application High frequency amplifier Outline TO-126 MOD 123 1. Base Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: Collector to Base Voltage 10 f = 1 MHz IE = 0 5 Input capacitance Cib (pF) 2 1 2 5 10 20 Collector to...
View all Hitachi Semiconductor (now Renesas) datasheets
| Part Number | Description |
|---|---|
| 2SC3127 | Silicon NPN Transistor |
| 2SC3128 | Silicon NPN Transistor |
| 2SC3336 | Silicon NPN Transistor |
| 2SC3337 | Silicon NPN Transistor |
| 2SC3338 | Silicon NPN Epitaxial Transistor |
| 2SC3365 | Silicon NPN Transistor |
| 2SC3374 | NPN Transistor |
| 2SC3380 | Silicon NPN Triple Diffused Transistor |
| 2SC3390 | Silicon NPN Epitaxial Transistor |
| 2SC3391 | Silicon NPN Epitaxial Planar Transistor |
