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2SC4416 - Silicon NPN Transistor

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  • 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg. , 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor. hitachi. com/ Europe : http://www. hitachi-eu. com/hel/ecg Asia (Singapore) : http://www. has. hitachi. com. sg/grp3/sicd/index. htm Asia (Taiwan) : http://www. hitachi. com. tw/E/Product/SICD_Fr.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC4416 Silicon NPN Epitaxial Application UHF Frequency conversion, Wide band amplifier Outline MPAK 3 1 2 1. Base 2. Emitter 3. Collector 2SC4416 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 25 13 3 50 150 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current Collector to emitter saturation voltage DC current transfer ratio Collector output capacitance Gain bandwidth product Conversion gain I EBO VCE(sat) hFE Cob fT CG Min 25 — — — — 50 — 3.