uo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F. , North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd. , 1999. All rights reserved. Printed in Japan.
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2SC4422
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Outline
UPAK
1 3 2
4
1. Base 2. Collector 3. Emitter 4. Collector (Flange)
2SC4422
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 11 2 50 400 150 –55 to +150 Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Collector cutoff current Symbol V(BR)CBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Note: Marking is “CR”. I EBO hFE Cob fT PG NF Min 15 — — — 50 — 4.5 7.
2SC4422 Datasheet
