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2SC4796 - Silicon NPN Transistor

Key Features

  • High speed switching tf ≤ 0.6 µs.
  • High breakdown voltage VCBO = 1700 V.
  • Isolated package TO.
  • 3PFM 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current www. DataSheet4U. com Symbol VCBO VCEO VEBO IC ic(surge) PC.
  • 1 Tj Tstg Rating 1700 900 6 6 16 50 150.
  • 55 to +150 Unit V V V A A W °C °C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC4796 Silicon NPN Triple Diffused Application TV / character display horizontal deflection output TO–3PFM Features • High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isolated package TO–3PFM 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current www.DataSheet4U.