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2SC5247 - Silicon NPN Transistor

Key Features

  • High gain bandwidth product fT = 13.5 GHz typ.
  • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5247 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is “ZD.
  • ”. Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SC5246 Silicon NPN Transistor
2SC5207A NPN TRANSISTOR
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2SC5250 Silicon NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC5247 Silicon NPN Epitaxial ADE-208-281 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5247 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Marking is “ZD–”. Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 15 8 1.5 50 80 150 –55 to +150 Unit V V V mA mW °C °C Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor.