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2SC5251 - Silicon NPN Transistor

Key Features

  • High breakdown voltage VCBO = 1500 V.
  • High speed switching tf = 0.2 µsec (typ).
  • Isolated package TO-3P.
  • FM (N) Outline TO-3PFM (N) 1. Base 2. Collector 3. Emitter 1 2 3 2SC5251 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO I.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC5251 Silicon NPN Triple Diffused Planar Preliminary Application Character display horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.2 µsec (typ) • Isolated package TO-3P•FM (N) Outline TO-3PFM (N) 1. Base 2. Collector 3. Emitter 1 2 3 2SC5251 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC* Tj Tstg 1 Ratings 1500 800 6 12 24 50 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 800 6 — 8 5 — — — Typ — — — — — — — 0.