2SC5252 Datasheet | Hitachi Semiconductor

Features - High breakdown voltage VCBO = 1500 V - High speed switching tf ≤ 0.15 µsec(typ.) - Isolated package TO- 3P- FM Outline TO-3PFM 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. TC = 25°C Symbol VCBO VCEO VEBO IC IC(peak) PC- Tj Tstg Ratings 1500 800 6 15 30 50 150 - 55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min 800 6 - 8 3 - - - Typ - - - - - - - 0.15 Max - - 500 35 6 5 1.5 0.3 V V µsec Unit V V µA Test conditions IC = 10 m A, RBE = ∞ IE = 10 m A, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 8 A IC = 10 A, IB = 3 A IC = 10 A, IB = 3 A ICP = 7 A, IB1 = 2 A, f H = 31.5 k Hz Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current...