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2SD1115K - Silicon NPN Transistor

Download the 2SD1115K datasheet PDF. This datasheet also covers the 2SD1115 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (2SD1115_HitachiSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SD1115(K) Silicon NPN Triple Diffused www.DataSheet4U.com Application High voltage switching, igniter Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 3 4.5 kΩ (Typ) 250 Ω (Typ) 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(peak) PC* Tj Tstg 1 Ratings 400 300 7 3 6 40 150 –55 to +150 Unit V V V A A W °C °C 2SD1115(K) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter sustain voltage Emitter to base breakdown voltage www.DataSheet4U.