Datasheet Details
| Part number | 2SD1115 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1115-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD1115 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 205.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1115-INCHANGE.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min)@IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage switching, igniter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 6 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1115 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD1115 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN IC= 50mA;
L= 10mH, PW= 50μ VCEO(SUS) Collector-Emitter Sustaining Voltage s;
Compare 2SD1115 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1115 | Silicon NPN Transistor | Hitachi Semiconductor |
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2SD1115K | Silicon NPN Transistor | Hitachi Semiconductor |
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2SD1115K | SILICON POWER TRANSISTOR | SavantIC |
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