2SD1113
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 300V(Min)
- High DC Current Gain
: h FE= 500(Min) @IC= 4A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Igniter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS...
