2SD1113 datasheet by Inchange Semiconductor.
| Part number | 2SD1113 |
|---|---|
| Datasheet | 2SD1113-InchangeSemiconductor.pdf |
| File Size | 211.37 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1113 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1113 | NPN TRANSISTOR | Hitachi Semiconductor |
 |
2SD1113 | Silicon NPN Transistor | Renesas |
|
2SD1113K | NPN TRANSISTOR | Hitachi Semiconductor |
|
2SD1113K | Silicon NPN Transistor | Renesas |
View all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1117 | Silicon NPN Power Transistor |
| 2SD1118 | Silicon NPN Power Transistor |
| 2SD1126 | Silicon NPN Darlington Power Transistor |
| 2SD1127 | Power Transistor |
| 2SD1141 | Power Transistor |
| 2SD1154 | Silicon NPN Power Transistor |
| 2SD1157 | Silicon NPN Power Transistor |
| 2SD1162 | Silicon NPN Darlington Power Transistor |
| 2SD1170 | Power Transistor |
| 2SD1171 | Silicon NPN Transistor |
