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2SD1118 - Silicon NPN Power Transistor

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Part number 2SD1118
Manufacturer Inchange Semiconductor
File Size 209.13 KB
Description Silicon NPN Power Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) High DC Current Gain- : hFE= 300V(Min.) @IC= 1A Low Collector Saturation Voltage High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solid sate relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collec

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