Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min)
- High DC Current Gain-
: hFE= 300V(Min.) @IC= 1A
- Low Collector Saturation Voltage
- High Reliability
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Switching regulators
- DC-DC converter
- Solid sate relay
- General purpose power...