Datasheet Details
| Part number | 2SD1117 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.53 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1117_InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD1117.
| Part number | 2SD1117 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.53 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet | 2SD1117_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A ·Wide Area of Safe Operation ·Complement to Type 2SB850 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio amplifier, series regulators and general purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA;
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