Datasheet Details
| Part number | 2SD1117 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.53 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
 2SD1117 Datasheet
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| Part number | 2SD1117 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.53 KB |
| Description | Silicon NPN Power Transistor |
| Datasheet |
2SD1117 Datasheet
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A Wide Area of Safe Operation Complement to Type 2SB850 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio amplifier, series regulators and general purpose power amplifiers.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V
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