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2SD1117 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A Wide Area of Safe Operation Complement to Type 2SB850 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

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isc Silicon NPN Power Transistor 2SD1117 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A ·Wide Area of Safe Operation ·Complement to Type 2SB850 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio amplifier, series regulators and general purpose power amplifiers.