| Part number | 2SD1117 |
|---|---|
| Datasheet | 2SD1117_InchangeSemiconductor.pdf |
| File Size | 208.53 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN Power Transistor |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 5A ·Wide Area of Safe Operation ·plement to Type 2SB850 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio amplifier, series regulators and general purpose power amplifiers.
See all Inchange Semiconductor datasheets
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| 2SD1127 | Power Transistor |
| 2SD1141 | Power Transistor |
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| 2SD1157 | Silicon NPN Power Transistor |
| 2SD1162 | Silicon NPN Darlington Power Transistor |
| 2SD1170 | Power Transistor |
| 2SD1171 | Silicon NPN Transistor |
