Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 40V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 5A
- Wide Area of Safe Operation
- plement to Type 2SB850
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio amplifier, series regulators and general purpose power...