| Part number | 2SD1114 |
|---|---|
| Datasheet | 2SD1114-INCHANGE.pdf |
| File Size | 182.97 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High DC Current Gain : 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1114 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA;.
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD111 | Silicon NPN Power Transistor |
| 2SD1110 | NPN Transistor |
| 2SD1115 | NPN Transistor |
| 2SD1124 | NPN Transistor |
| 2SD1128 | NPN Transistor |
| 2SD113 | NPN Transistor |
| 2SD1133 | NPN Transistor |
| 2SD1134 | NPN Transistor |
| 2SD1135 | NPN Transistor |
| 2SD1136 | NPN Transistor |
