Datasheet Details
| Part number | 2SD1110 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.70 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1110-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor 2SD1110.
| Part number | 2SD1110 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.70 KB |
| Description | NPN Transistor |
| Datasheet | 2SD1110-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SB849 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 12 A 80 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1110 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A;
IB= 0.5A VBE(sat) Base -Emitter Saturation Voltage IC= 5.0A;
Compare 2SD1110 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD1110 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD111 | Silicon NPN Power Transistor |
| 2SD1114 | NPN Transistor |
| 2SD1115 | NPN Transistor |
| 2SD1124 | NPN Transistor |
| 2SD1128 | NPN Transistor |
| 2SD113 | NPN Transistor |
| 2SD1133 | NPN Transistor |
| 2SD1134 | NPN Transistor |
| 2SD1135 | NPN Transistor |
| 2SD1136 | NPN Transistor |