| Part number | 2SD1110 |
|---|---|
| Datasheet | 2SD1110-INCHANGE.pdf |
| File Size | 213.70 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·plement to Type 2SB849 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD1110 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1110 | SILICON POWER TRANSISTOR | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD111 | Silicon NPN Power Transistor |
| 2SD1114 | NPN Transistor |
| 2SD1115 | NPN Transistor |
| 2SD1124 | NPN Transistor |
| 2SD1128 | NPN Transistor |
| 2SD113 | NPN Transistor |
| 2SD1133 | NPN Transistor |
| 2SD1134 | NPN Transistor |
| 2SD1135 | NPN Transistor |
| 2SD1136 | NPN Transistor |
