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2SD1489 - Silicon NPN Transistor

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Part number 2SD1489
Manufacturer Hitachi Semiconductor
File Size 23.67 KB
Description Silicon NPN Transistor
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2SD1489 Silicon NPN Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SB1058 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD1489 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 20 16 6 2 0.75 150 –55 to +150 Unit V V V A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 20 16 6 — — 1 Typ — — — — — — — 80 20 Max — — — 2 0.2 500 0.3 — — Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I E = 10 µA, IC = 0 VCB = 16 V, IE = 0 VEB = 6 V, IC = 0 VCE = 2 V, IC = 0.
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