| Part number | 2SD1609 |
|---|---|
| Datasheet | 2SD1609_HitachiSemiconductor.pdf |
| File Size | 65.87 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon NPN Transistor |
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Silicon NPN Epitaxial Application Low frequency high voltage amplifier plementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1 1. The 2SD1609 and 2SD1610 are grouped by h FE1 as follows. Collector Current Collector to emitter saturation voltage VCE(sat) (V) Base to emitter saturation voltage VBE(sat) (V) 5 Gain bandwidth product fT (MHz) IC = 10 IB Pulse VBE(sat) Ta = 25°C 75 Gain Bandwidth Product vs.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SD1609 | NPN Transistor | INCHANGE |
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2SD1609 | NPN TRANSISTOR | UTC |
See all Hitachi Semiconductor (now Renesas) datasheets
| Part Number | Description |
|---|---|
| 2SD1603 | NPN Transistor |
| 2SD1604 | NPN Transistor |
| 2SD1606 | Silicon NPN Transistor |
| 2SD1610 | Silicon NPN Transistor |
| 2SD1676 | NPN Silicon Transistor |
| 2SD1101 | NPN TRANSISTOR |
| 2SD1113 | NPN TRANSISTOR |
| 2SD1113K | NPN TRANSISTOR |
| 2SD1115 | Silicon NPN Transistor |
| 2SD1115K | Silicon NPN Transistor |
