| Part number | 2SD1609 |
|---|---|
| Datasheet | 2SD1609-INCHANGE.pdf |
| File Size | 189.44 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·100% avalanche tested ·plement to Type 2SB1109 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency and high-voltage amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1609 TC=25℃ unless...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD1609 | Silicon NPN Transistor | Hitachi Semiconductor |
 |
2SD1609 | NPN TRANSISTOR | UTC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD1600 | NPN Transistor |
| 2SD1607 | NPN Transistor |
| 2SD1619 | NPN Transistor |
| 2SD1624 | NPN Transistor |
| 2SD1632 | NPN Transistor |
| 2SD1633 | NPN Transistor |
| 2SD1634 | NPN Transistor |
| 2SD1638 | NPN Transistor |
| 2SD1647 | NPN Transistor |
| 2SD1649 | NPN Transistor |
