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2SD1609 - NPN Transistor

General Description

High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) Good Linearity of hFE 100% avalanche tested Complement to Type 2SB1109 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and high-vo

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1609 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Complement to Type 2SB1109 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency and high-voltage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 160 UNIT V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 12.5 W 1.25 150 ℃ Tstg Storage Temperature Range -45~150 ℃ isc website：www.iscsemi.