The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SD1922
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-92MOD
2
3 ID
1. Emitter 2. Collector 3. Base
1
3 2 1
2SD1922
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current E to C diode forward current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ic (peak) ID PC Tj Tstg Ratings 25 25 6 0.8 1.5 0.8 0.9 150 –55 to +150 Unit V V V A A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 25 25 6 — — — 250 — — Typ — — — — — — — — — — Max — 35 35 — 0.2 0.5 0.2 1200 0.3 1.