2SH18 - Silicon N-Channel IGBT

Product Overview

Hitachi Semiconductor

Datasheet Details

Part number	2SH18
Manufacturer	Hitachi Semiconductor
File Size	43.18 KB
Description	Silicon N-Channel IGBT
Datasheet	2SH18 Datasheet
Additional preview pages of the 2SH18 datasheet.

2SH18 Product details

Description

Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document.

Products and product specifications may be subject to change without notice.

Features

High speed switching.
Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 18 30 60 150.
55 to +150 Unit V V A A W °C °C.

📁 Similar Datasheet

2SH20 - SILICON P EMITTER PLANAR TYPE TRANSISTOR (Toshiba)
2SH21 - SILICON P EMITTER PLANAR TYPE TRANSISTOR (Toshiba)

Other Datasheets by Hitachi Semiconductor

2SH11 - Silicon N-Channel IGBT
2SH12 - Silicon N-Channel IGBT
2SH13 - Silicon N-Channel IGBT
2SH14 - Silicon N-Channel IGBT
2SH15 - Silicon N-Channel IGBT
2SH16 - Silicon N-Channel IGBT
2SH17 - Silicon N-Channel IGBT
2SH19 - Silicon N-Channel IGBT

Published: Mar 30, 2005 |