2SH14 Overview
ADE 208 287 (Z) 2SH14 Silicon N-Channel IGBT 1st. 1995 Application TO 3P High speed power switching.
2SH14 Key Features
- High speed switching
- Low on saturation voltage
| Part number | 2SH14 |
|---|---|
| Datasheet | 2SH14_HitachiSemiconductor.pdf |
| File Size | 43.66 KB |
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| Description | Silicon N-Channel IGBT |
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ADE 208 287 (Z) 2SH14 Silicon N-Channel IGBT 1st. 1995 Application TO 3P High speed power switching.
See all Hitachi Semiconductor (now Renesas) datasheets
| Part Number | Description |
|---|---|
| 2SH11 | Silicon N-Channel IGBT |
| 2SH12 | Silicon N-Channel IGBT |
| 2SH13 | Silicon N-Channel IGBT |
| 2SH15 | Silicon N-Channel IGBT |
| 2SH16 | Silicon N-Channel IGBT |
| 2SH17 | Silicon N-Channel IGBT |
| 2SH18 | Silicon N-Channel IGBT |
| 2SH19 | Silicon N-Channel IGBT |
| 2SH20 | Silicon N-Channel IGBT |
| 2SH21 | N-Channel MOSFET |