Datasheet4U.com

2SH11 Datasheet Silicon N-Channel IGBT

Manufacturer: Hitachi Semiconductor (now Renesas)

📥 Download Datasheet

2SH11 silicon n-channel igbt by Hitachi Semiconductor (now Renesas) - Datasheet Preview

Datasheet Details

Part number	2SH11
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	41.32 KB
Description	Silicon N-Channel IGBT
Datasheet	2SH11 Datasheet

Overview

ADE–208–274 (Z) 2SH11 Silicon N-Channel IGBT 1st.

Edition Feb.

Key Features

2.
High speed switching.
Low on saturation voltage 1 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 10 20 50 150.
55 to +150 Unit V V A A W °C °C.

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number	Description
2SH12	Silicon N-Channel IGBT
2SH13	Silicon N-Channel IGBT
2SH14	Silicon N-Channel IGBT
2SH15	Silicon N-Channel IGBT
2SH16	Silicon N-Channel IGBT
2SH17	Silicon N-Channel IGBT
2SH18	Silicon N-Channel IGBT
2SH19	Silicon N-Channel IGBT
2SH20	Silicon N-Channel IGBT
2SH21	N-Channel MOSFET