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2SH13 Datasheet Silicon N-Channel IGBT

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview

ADE–208–286 (Z) 2SH13 Silicon N-Channel IGBT 1st.

Edition Feb.

Key Features

  • High speed switching.
  • Low on saturation voltage 1 2 1 3 2 3 1. Gate 2. Collector 3. Emitter Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Symbol VCES Ratings 600 ±20 20 40 75 150.
  • 55 to +150 Unit V V A A W °C °C.